Toshiharu Nagumo,: search on Z-Library

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1

Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme

Tetsu Ohtou, Kouki Yokoyama, Ken Shimizu, Toshiharu Nagumo, Toshiro Hiramoto

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 909 KB

english, 2007

2

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Aggressive design of millisecond annealing junctions for near-scaling-limit bulk CMOS using raised source/drain extensions

Yako, Koichi, Uejima, Kazuya, Toyoji Yamamoto,, Mineji, Akira, Nagumo, Toshiharu, Takeo Ikezawa,, Norihiko Matsuzaka,, Shishiguchi, Seiichi, Takashi Hase,, Hane, Masami

Year:

2008

Language:

english

File:

PDF, 772 KB

english, 2008

3

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps

Nagumo, Toshiharu, Takeuchi, Kiyoshi, Hase, Takashi, Hayashi, Yoshihiro

Year:

2010

Language:

english

File:

PDF, 405 KB

english, 2010

4

Determination of poor prognostic immune features of tumour microenvironment in non-smoking patients with lung adenocarcinoma

Kinoshita, Tomonari, Kudo-Saito, Chie, Muramatsu, Reiko, Fujita, Tomonobu, Saito, Miyuki, Nagumo, Haruna, Sakurai, Toshiharu, Noji, Shinobu, Takahata, Emi, Yaguchi, Tomonori, Tsukamoto, Nobuo, Hayashi

Journal:

European Journal of Cancer

Year:

2017

Language:

english

File:

PDF, 2.18 MB

english, 2017

5

Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications

Anil Kumar, Toshiharu Nagumo, Gen Tsutsui, Tetsu Ohtou, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

6

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Adding Physical Scalability to BSIM4 by Meta-Modeling of Fitting Parameters

Nagumo, Toshiharu, Takeuchi, Kiyoshi, Kumashiro, Shigetaka, Hayashi, Yoshihiro

Year:

2009

Language:

english

File:

PDF, 278 KB

english, 2009

7

Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs

Khakifirooz, Ali, Cheng, Kangguo, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Liu, Qing, Levin, Theodore M., Edge, Lisa F., He, Hong, Kuss, James, Allibert, Frederic, Nguyen, Bich-Yen, Do

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 412 KB

english, 2013

8

[IEEE 2006 International Workshop on Nano CMOS (IWNC) - Mishima, Japan (2006.01.30-2006.02.1)] 2006 International Workshop on Nano CMOS - Mobility enhancement in (110)-oriented ultra-thin-body single-gate and double-gate SOI MOSFETs

Toshiro Hiramoto,, Gen Tsutsui,, Masumi Saitoh,, Toshiharu Nagumo,, Takuya Saraya,

Year:

2006

Language:

english

File:

PDF, 608 KB

english, 2006

9

Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal–Oxide–Semiconductor-Field-Effect-Transistors

Ohtou, Tetsu, Nagumo, Toshiharu, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 830 KB

english, 2005

10

Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect

Nagumo, Toshiharu, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 396 KB

english, 2005

11

Future Electron Devices and SOI Technology –Semi-Planar SOI MOSFETs with Sufficient Body Effect–

Hiramoto, Toshiro, Saito, Toshiki, Nagumo, Toshiharu

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 107 KB

english, 2003

12

Temperature Dependence of Off-Current in Bulk and Fully Depleted SOI MOSFETs

Miyaji, Kousuke, Saitoh, Masumi, Nagumo, Toshiharu, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 2.45 MB

english, 2005

13

Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications

Ohtou, Tetsu, Nagumo, Toshiharu, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 360 KB

english, 2004

14

Analytical model of body factor in short channel bulk MOSFETs for low voltage applications

Anil Kumar, Toshiharu Nagumo, Gen Tsutsui, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 264 KB

english, 2004

15

Design Guideline of Multi-Gate MOSFETs With Substrate-Bias Control

Toshiharu Nagumo, Toshiro Hiramoto

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 692 KB

english, 2006

16

Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors

Tsutsui, Gen, Saitoh, Masumi, Nagumo, Toshiharu, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 103 KB

english, 2005

17

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Effects of drain bias on threshold voltage fluctuation and its impact on circuit characteristics

Makoto Miyamura,, Toshiharu Nagumo,, Kiyoshi Takeuchi,, Koichi Takeda,, Masami Hane,

Year:

2008

Language:

english

File:

PDF, 2.74 MB

english, 2008

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